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| Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE General Description The AP4301 is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. The device contains two operational amplifiers and a precision shunt regulator. Op Amp 1 is designed for voltage control, whose non-inverting input internally connects to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. The AP4301 is available in standard packages of DIP8 and SOIC-8. AP4301 Features Op Amp * Input Offset Voltage: 0.5mV * Supply Current: 250A per Op-Amp at 5.0V Supply Voltage * Unity Gain Bandwidth: 1MHz * Output Voltage Swing: 0 to (VCC-1.5)V * Power Supply Range: 3 to 18V Voltage Reference * Fixed Output Voltage Reference: 1.25V, 1.24V * Voltage Tolerance: 0.5%, 1% * Sink Current Capability from 0.1 to 80mA Applications * * Battery Charger Switching Power Supply SOIC-8 DIP-8 Figure 1. Package Types of AP4301 Jul. 2006 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Pin Configuration AP4301 M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 INPUT 1INPUT 1+ / VKA GND 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ Top View Figure 2. Pin Configuration of AP4301 Functional Block Diagram OUTPUT 1 1 8 VCC 2 INPUT 1 + 7 OUTPUT 2 + 3 6 INPUT 2 GND 4 5 Figure 3. Functional Block Diagram of AP4301 Jul. 2006 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Functional Block Diagram (Continued) VCC AP4301 6A 4A 100A Q5 Q6 Q2 INPUTQ1 Q3 Q4 Rsc OUTPUT INPUT+ Q11 Q10 Q8 Q9 Q12 50A Q13 Cc Q7 Figure 4. Op Amp Functional Block Diagram (Each Amplifier) VKA 20A 20A GND Figure 5. Voltage Reference Functional Block Diagram Jul. 2006 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Ordering Information AP4301 Circuit Type Voltage Tolerance A: 0.5% B: 1% Package M: SOIC-8 P: DIP-8 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Output Voltage Reference C: 1.25V D: 1.24V AP4301 Package Reference Voltage 1.25V Voltage Tolerance 0.5% 1% 0.5% 1% 0.5% Temperature Range Part Number Tin Lead AP4301AP-C Lead Free AP4301AP-CE1 AP4301BP-CE1 AP4301AP-DE1 AP4301BP-DE1 AP4301AM-CE1 Marking ID Tin Lead AP4301AP-C AP4301BP-C AP4301AP-D AP4301BP-D Lead Free AP4301AP-CE1 AP4301BP-CE1 AP4301AP-DE1 AP4301BP-DE1 Packing Type DIP-8 1.24V -40 to 85oC AP4301BP-C AP4301AP-D AP4301BP-D AP4301AM-C Tube AP4301AM-C AP4301AM-CE1 Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape/ Reel AP4301AM-CTR AP4301AM-CTRE1 AP4301AM-C AP4301AM-CE1 AP4301BM-C AP4301BM-CE1 AP4301BM-C AP4301BM-CE1 1.25V 1% SOIC-8 0.5% 1.24V 1% -40 to 85oC AP4301BM-CTR AP4301BM-CTRE1 AP4301BM-C AP4301BM-CE1 AP4301AM-D AP4301AM-DE1 AP4301AM-D AP4301AM-DE1 AP4301AM-DTR AP4301AM-DTRE1 AP4301AM-D AP4301AM-DE1 AP4301BM-D AP4301BM-DE1 AP4301BM-D AP4301BM-DE1 AP4301BM-DTR AP4301BM-DTRE1 AP4301BM-D AP4301BM-DE1 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage (VCC to GND) Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) Op Amp 2 Input Differential Voltage (Pins 5, 6) Voltage Reference Cathode Current (Pin 3) Power Dissipation Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) Symbol VCC VIN VID IK DIP-8 PD TJ TSTG TL SOIC-8 150 -65 to 150 260 Value 20 -0.3 to VCC+0.3 20 100 800 500 mW o o o AP4301 Unit V V V mA C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Temperature Min 3 -40 Max 18 85 Unit V o C Jul. 2006 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Electrical Characteristics Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Total Supply Current, Excluding Current in Voltage Reference Voltage Reference Section Refeence Voltage for AP4301-C IK=10mA TA=25oC IK=10mA TA=25oC 0.5% tolerance 1% tolerance 0.5% tolerance 1% tolerance 1.244 1.250 1.237 1.234 1.240 1.227 5 0.2 IK=1.0 to 80mA, f<1kHz 0.2 1.252 17 1 0.5 mV mA 1.263 1.246 V 1.256 V Conditions VCC=5V, no load, -40oCTA85oC VCC=18V, no load, -40oCTA85oC Min Typ 0.5 0.6 Max 0.8 mA 1.2 Unit AP4301 Reference Voltage for AP4301-D Reference Voltage Deviation over Full I =10mA, T =-40 to 85oC K A Temperature Range Minimum Cathode Current for Regulation Dynamic Impedance Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) Input Offset Voltage TA=25oC TA=-40 to 85oC Input Offset Voltage Temperature Drift Input Bias Current (Inverting Input Only) Large Signal Voltage Gain Power Supply Rejection Ratio Source Output Current Sink Output Voltage Swing (High) Output Voltage Swing (Low) Slew Rate VCC=15V, VID=-1V, VO=2V VCC=18V, RL=10K, VID=1V VCC=18V, RL=10K, VID=-1V VCC=18V, RL=2k, AV=1, VIN=0.5 to 2V, CL=100pF VCC=18V, RL=2k, CL=100pF, VIN=10mV, f=100kHz 0.2 10 16 TA=-40 to 85oC TA=25oC VCC=15V, RL=2K, VO=1.4 to 11.4V VCC=5 to 18V VCC=15V, VID=1V, VO=2V 85 70 20 7 0.5 3 mV 5 V/oC 150 nA dB dB mA mA V 100 mV V/ s 20 100 90 40 20 16.5 17 0.5 Gain Bandwidth Product 0.7 1 MHz Jul. 2006 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Electrical Characteristics (Continued) Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit AP4301 Op Amp2 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) TA=25oC Input Offset Voltage TA=-40 to 85oC Input Offset Voltage Temperature Drift Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Large Signal Voltage Gain Power Supply Rejection Ratio Source Output Current Sink Output Voltage Swing (High) Output Voltage SWing (Low) Slew Rate VCC=15V, VID=-1V, VO=2V VCC=18V, RL=10k, VID=1V VCC=18V, RL=10k, VID=-1V VCC=18V, RL=2k, AV=1, VIN=0.5 to 2V, CL=100pF VCC=18V, RL=2k, CL=100pF, VIN=10mV, f=100kHz 0.2 TA=-40 to 85oC TA=25oC TA=25oC VCC=0 to 18V TA=25oC, VCM=0 to 3.5V VCC=15V, RL=2k, VO=1.4 to 11.4V VCC=5 to 18V VCC=15V, VID=1V, VO=2V 0 70 85 70 20 85 100 90 40 7 2 20 30 150 VCC-1.5 0.5 3 mV 5 V/oC nA nA V dB dB d mA mA V 100 10 16 20 16.5 17 mV V/ s 0.5 1 Gain Bandwidth Product 0.7 MHz Jul. 2006 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Typical Performance Characteristics AP4301 1.254 1.244 1.242 AP4301-D Reference Voltage (V) Reference Voltage (V) 60 o 1.252 1.240 1.238 1.236 1.234 1.232 1.230 -40 1.250 AP4301-C 1.248 1.246 -40 -20 0 20 40 80 100 120 -20 0 20 40 60 o 80 100 120 Amibient Temperature ( C) Amibient Temperature ( C) Figure 6. Reference Voltage vs. Ambient Temperature Figure 7. Reference Voltage vs. Ambient Temperature 150 150 100 100 Cathode Current (mA) Cathode Current (mA) AP4301-C VKA=VREF TA=25 C o AP4301-D VKA=VREF TA=25 C o 50 50 0 0 -50 -50 -100 -100 -150 -1 0 1 -150 -1 0 1 Cathode Voltage (V) Cathode Voltage (V) Figure 8. Cathode Current vs. Cathode Voltage Figure 9. Cathode Current vs. Cathode Voltage Jul. 2006 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Typical Performance Characteristics (Continued) AP4301 30 110 25 100 Input Bias Current (nA) 20 Voltage Gain(dB) 90 15 80 10 RL=2K RL=20K 70 5 0 -40 60 -20 0 20 40 60 o 80 100 120 0 2 4 6 8 10 12 14 16 18 20 Ambient Temperature ( C) Supply Voltage (V) Figure10. Input Bias Current vs. Ambient Temperature Figure 11. Op Amp Voltage Gain Jul. 2006 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Typical Application R1 AP4301 Opto Isolator R6 AC Line SMPS Op Amp 2 + R7 Battery Pack R3 R4 R5 Current R2 Sense Op Amp 2 + R8 AP4301 Figure 12. Application of AP4301 in a Constant Current and Constant Voltage Charger Jul. 2006 Rev. 1. 2 10 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Mechanical Dimensions DIP-8 Unit: mm(inch) AP4301 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Jul. 2006 Rev. 1. 2 11 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AP4301 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 12 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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